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| SUR20100 thru SUR20120 Ultra Fast Recovery Epitaxial Diodes Dimensions TO-220AC A C(TAB) A C C Dim. A B C D E F G H J K L M N Q A=Anode, C=Cathode, TAB=Cathode SUR20100 SUR20120 VRSM V 1000 1200 VRRM V 1000 1200 Inches Min. Max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 Milimeter Min. Max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 Symbol IFRMS IFAVM IFRM IFSM Test Conditions TVJ=TVJM TC=85oC; rectangular, d=0.5 tp<10us; rep. rating, pulse width limited by TVJM TVJ=45oC TVJ=150oC TVJ=45oC t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine Maximum Ratings 70 17 220 130 140 110 120 85 80 60 60 -40...+150 150 -40...+150 Unit A A I2t TVJ TVJM Tstg Ptot Md Weight TVJ=150oC A2s o C TC=25oC Mounting torque 78 0.4...0.6 2 W Nm g SUR20100 thru SUR20120 Ultra Fast Recovery Epitaxial Diodes Symbol IR Test Conditions TVJ=25oC; VR=VRRM TVJ=25oC; VR=0.8.VRRM TVJ=125oC; VR=0.8.VRRM IF=12A; TVJ=150oC TVJ=25oC For power-loss calculations only TVJ=TVJM Characteristic Values typ. max. 750 250 7 1.87 2.15 1.65 18.2 1.6 60 IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC _ VR=540V; IF=20A; -diF/dt=100A/us; L<0.05uH; TVJ=100 C o Unit uA uA mA V V m K/W ns A VF VTO rT RthJC RthJA trr IRM 40 7 60 FEATURES * International standard package * Glass passivated chips * Very short recovery time * Extremely low losses at high switching frequencies * Low IRM-values * Soft recovery behaviour APPLICATIONS * Antiparallel diode for high frequency switching devices * Anti saturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders ADVANTAGES * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses * Operating at lower temperature or space saving by reduced cooling SUR20100 thru SUR20120 Ultra Fast Recovery Epitaxial Diodes 70 A 60 50 IF 40 30 20 10 0 0 1 VF 2 T V J = 25C T V J =100C T V J =150C Qr 3 2 1 0 4 1 10 -diF /dt 100 A/ s 1000 6 C 5 4 T VJ =100C V R = 540V 50 A 40 T V J =100C V R = 540V I F =30A I F =60A I F =30A I F =15A max. IF =30A IF =60A IF =30A IF =15A IR M 30 20 max. typ. 10 typ. 3V 0 0 200 -diF /dt 400 A/ s 600 F ig. 1 F orward current vers us voltage drop. 1.4 1.2 1.0 Kf 0.8 0.6 0.4 0.2 0.0 0 40 T VJ 80 120 C 160 F ig. 2 R ecovery charge vers us -diF /dt. 1.0 s 0.9 0.8 F ig. 3 P eak revers e current vers us -diF /dt. 60 V 50 40 30 20 tfr 1200 ns VFR 1000 800 600 400 200 0 T VJ =100C V R =540V IR M trr 0.7 0.6 0.5 max. IF =30A IF =60A IF =30A IF =15A V FR tfr QR 0.4 0.3 0.2 0.1 0 200 -diF /dt typ. 10 0 0 200 -diF /dt T V J =125C I F =30A 400 A/ s 600 400 A/ s 600 F ig. 4 Dynamic parameters vers us junction temperature. F ig. 5 R ecovery time vers us -diF /dt. F ig. 6 P eak forward voltage vers us diF /dt. F ig. 7 T rans ient thermal impedance junction to cas e. |
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